Abstract
Zinc oxide (ZnO) nanocrystals (NCs) with high crystalline qualitywere prepared via radio-frequency magnetron sputtering as aSiO2/ZnO/SiO2 trilayer onSi(100) and Al2O3(0001) substrates with an intermediate in situ annealing step. Transmission electronmicroscopy reveals a uniform dispersion of ZnO NCs in the amorphousSiO2 matrix with typical sizes up to 16 nm with a larger fraction of smaller crystals. The sizedistribution analysis yields a mean grain size of 5 nm for small particles. IndividualZnO NCs show a well-defined hexagonal close packed wurtzite structure andlattice parameters close to those of bulk ZnO, confirming their high crystallinequality. Mapping of the Zn distribution by means of energy-filtered transmissionelectron microscopy reveals a strongly non-uniform distribution of Zn within theSiO2 matrix, corroborating the chemical separation of ZnO NCs from surroundingSiO2. Optical transmittance measurements confirm the findings of the electron microscopyanalysis. The fabrication technique described opens up new possibilities in the preparationof ZnO NCs with high crystalline quality, including growth in monolithic optical cavitieswithout intermediate ex situ fabrication steps.
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