Abstract
A series of Cd1-xHoxS semiconductor quantum dots were prepared via ethylene glycol assisted solvothermal approach, for the first time. The structure, elemental composition, and morphology of the Cd1-xHoxS QDs were characterized using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), selected area of electron diffraction (SAED), and transmission electron microscopy (TEM) measurements. The optical properties were studied using UV–Vis. Spectrophotometry and luminescence spectroscopy measurements. The substitution of the Cd-atoms by the Ho-atoms increases the crystallite size of the CdS QDs and decreases their optical bandgap. The inclusion of the Ho-atoms in the Cd-sites of the cubic CdS nanocrystals improves the luminescence intensity by 14 times. The Stokes shift revealed that the Ho-atoms decrease the surface defects of the CdS nanocrystals. The quantum yield of the Cd1-xHoxS nanocrystals reached 89%. These exceptional properties may open a new prospect for the Cd1-xHoxS QDs to be employed in the fields of the display panels and QLEDs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
