Abstract
Ag1−xGa1−xSixSe2 solutions with high Si doping level (x=1/2) are considered and new compound AgGaSiSe4 has been synthesized. It crystallizes in space group Aea2 and possesses very long axis of a=63.06(1)Å. The three-dimensional framework in AgGaSiSe4 is composed of AgSe3 trigonal planar units, AgSe4 tetrahedra and MSe4(M=Si, Ga) tetrahedra. AgGaSiSe4 is a congruently melting compound with the melt temperature of 759°C. The diffuse reflectance measurements reveal the band gap of 2.63eV in AgGaSiSe4 and the value is 0.33eV larger than that of Ag3Ga3SiSe8 (2.30eV).
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