Abstract

The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown InxGa1-xN were investigated for x = 0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K−1 and 21.84 × 10−4 Wm−1K−1 were observed, respectively for In0.07Ga0.93N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In0.20Ga0.80N alloy at room temperature.

Highlights

  • The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability

  • This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation

  • The efficiency of a TE material is determined by the figure-of-merit ZT=S2σT/k where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature, and is the thermal conductivity

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Summary

Introduction

The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. The highest Seebeck and power factor values of 507 μVK−1 and 21.84 × 10−4 Wm−1K−1 were observed, respectively for In0.07Ga0.93N at room temperature. Higher carrier concentration often lead to higher electrical conductivity, but result in low Seebeck coefficient and high thermal conductivity due to increased electronic contribution due to the Wiedemann-Franz law.[7,2,1] Ioffe et al.[8] calculated that the optimum charge carrier’s density that is good for TE materials needs to be in the range of 1018-1019 cm−3.

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