The structural evolution of light-ion implanted into GaAs single crystal after annealing

Abstract

Four groups of He+ and H+ with different dose combinations are implanted into GaAs crystal. After annealing, different phenomena of blisters and exfoliation appear on the surface. High resolution X-ray diffraction (HRXRD) is used to irradiate the surfaces of the four samples, and the diffraction satellite peaks are observed to move to the lower angles. The surface morphology of the four samples after annealing is observed by optical microscope. The depth of craters and the height of blisters are measured by atomic force microscope (AFM), and the critical pressure and internal stress of blisters are calculated. The damage microstructure induced by ion implantation after annealing is observed by transmission electron microscope (TEM), and the stress intensity factor at the crack tip is calculated. The different mechanisms of He+ and H+ in GaAs single crystal are compared. The dose combination of He+ and H+ is optimized to explore a more cost-effective way for GaAs film exfoliation.