Abstract
K-doped ZnO films were prepared on Al2O3(0001) substrates by solution deposition. For the prepared thin films of Zn1−xKxO (x=0.002, 0.01, 0.02, 0.05, 0.1), we carried out x-ray diffraction, transmittance spectroscopy, photoluminescence, Hall measurement and x-ray photoemission spectroscopy study, and found that properties like the crystallinity, optical band gap, carrier concentrations and chemical binding states changed at a K doping concentration of 2mol%. From these results, we suggest that the doped K in ZnO films processed by the sol–gel method plays a different role at K doping concentrations below 2mol% and above 2mol%.
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