THE STRUCTURAL AND ELECTRICAL PROPERTIES OF NON-STOICHIOMETRIC CADMIUM SELENIDE THIN FILMS

Abstract

Non-stoichiometric CdxSe100-x (x=10, 20, 30 at. %) alloys were prepared by melt-quenching technique, while thin films of these alloys were prepared by vacuum thermal evaporation technique. The Differential thermal analysis (DTA) results showed that the composition affects the characteristic temperatures, for instance, the glass transition, and peak crystallization temperatures. X-ray diffraction patterns (XRD) of the as-deposited films confirmed its amorphous nature except for films with x=30 at. %. These results were confirmed by scanning electron microscopy (SEM) investigations and correlated to the rigidity percolation threshold of the lattice. Furthermore, XRD patterns indicated that amorphous structures transformed into crystalline structures for annealed thin films at 423 K for 30 minutes. The microstructure parameters (crystal size, microstrain, and dislocation density) of both Se and CdSe phases were calculated for annealed films. The temperature dependence of dark d.c. conductivity of thin films was studied in the temperature range (300-500 K). The electrical measurements results showed two types of conduction mechanisms. Conduction is due to extended state in the temperature range (370-500 K) and variable range hopping in the temperature range (300-370 K). Moreover, in the high temperature range, the results indicate the validity of Meyer-Neldel rule (MNR) in the studied samples.