Abstract
Abstract Both undoped and Mn-doped BST films are fabricated on (1 1 1) Pt/Ti/SiO 2 /Si by metal organic deposition. X-ray diffraction and atomic force microscopy reveal the microstructure of the samples. The effect of Mn dopant on structural and electrical properties is studied. It is found that the dc leakage behavior and dielectric loss of the BST films are greatly improved due to the change of the valence state of Mn ions. Meanwhile, the tunability of Mn-doped BST films is suppressed, and the possible causes of tunability dependence are discussed.
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