Abstract
AbstractThe thin film reaction between Ti and Al-0.5%Cu to form TiAl3 is common in the microelectronics industry. In this paper the stress changes in Al-0.5%Cu films at elevated temperatures during the reaction are measured. The changes are measured in blanket films as well as in passivated interconnect lines. Results show that in blanket films the Al-0.5%Cu does not experience any stress change due to the reaction. However in passivated lines, where the layers are not allowed to relax in the normal direction, tensile stresses build up in the Al-0.5%Cu due to the volume shrinkage that happens when these films react.
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