The Strain relaxation and dislocation density of SiGe films in micron size window with different mask material grown by MBE

Abstract

AbstractThe strain relaxation and the misfit dislocation density in micron size windows with different mask materials were studied. Experiments showed that the misfit dislocation density and the strain in the SiGe films would be affected not only by the size of the windows but the mask material. Experiments also showed that after annealing the SiGe films grown in the micron size windows would be much more stable than films grown in the large area on the same wafer.