Abstract
The statistical contribution to resolution in concentration-depth profiles by sputtering combined with Auger electron spectroscopy and secondary ion mass spectrometry is evaluated using a modified form of the sequential layer sputtering model. The modification makes allowance for the fact that each surface atom has a sputtering probability which is inversely proportional to its instantaneous bonding with the matrix, as predicted by Sigmund's theory, instead of being constant. Thus the sputtering is site dependent with the most exposed atoms having the highest sputtering probability. The theory shows that the statistical contribution to the depth resolution for depths greater than 10 nm is approximately constant and, depending on the precise choice of parameters, will probably be in the range 1–2 nm instead of increasing with the square root of depth. Thus the statistical contribution, instead of being the dominant term in the resolution of concentration-depth profiles, may often have only a minor effect when compared with the atomic mixing, diffusional and instrumental terms.
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