Abstract
We studied the stationary properties of ramp type Josephson junctions with a graded barrier layer formed by varying the doping level of Pr in a Y 1− x Pr x Ba 2Cu 3O y barrier. The temperature dependence of the I c R n product is nearly linear for the junctions with a barrier thickness ranged from 20 nm to over 50 nm. A theoretical model, which assumes a linear order parameter structure in the graded barrier layer, was used to simulate the stationary properties of these junctions. Numerical result based on Usadel diffusive equation for this model is in good agreement with the experimental results.
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