Abstract
The present situation of ZnSe bulk growth is given. New steps for the control of the two main problems of melt-grown crystals are discussed: (i) the reduction of multitwins by seeding, and (ii) the maintenance of stoichiometric composition using an in-situ Zn source during growth. ZnSe single crystals with diameters of 1 inch have been grown by the high-pressure vertical Bridgman method. Twin-free (100) wafers were prepared for homoepitaxy. Structural and optical properties of such substrates are investigated and discussed. An average etch pit density of 10 5 cm −2 and a minimum full width at half maximum of 31 arc sec have been analysed.
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