Abstract
Defect luminescence in hydrogenated amorphous silicon has been selectively excited by below band-gap excitation at 4.2 K. The Staebler-Wronski (SW) effect has been investigated by comparing defect luminescence before and after prolonged light soaking of the samples. Two types of luminescence change have been observed: the 0.83 eV band in an undoped sample gains intensity after the light-soaking process, while the 0.85 eV band in a P-doped sample loses intensity. This result is compared with the SW effect reported for dangling-bond states. The present result is evidence for the theory that there are two kinds of defect states associated with dangling bonds.
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