Abstract
The stability of SiC coating in helium with a low concentration of O 2, CO 2, and H 2O is a key factor for their application in improvement of oxidation resistance of graphite for high temperature gas-cooled reactors (HTGRs). Through thermodynamic analysis, it is found that the influence factor controlling the critical temperature of passive oxidation for SiC is partial pressure of active gas in helium; the critical temperature of passive oxidation for SiC increases with the partial pressure of O 2, CO 2, and H 2O, SiC is prone to undergo active oxidation in He–CO 2 and He–H 2O system. SiO 2/SiC multilayer coating can improve the oxidation resistance of graphite at higher temperature than SiC coating does under normal operation condition for HTGRs.
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