Abstract
A challenging approach, but one providing a key solution to material growth, remote epitaxy (RE)—a novel concept related to van der Waals epitaxy (vdWE)—requires the stability of a two-dimensional (2-D) material. However, when graphene, a representative 2-D material, is present on substrates that have a nitrogen atom, graphene loss occurs. Although this phenomenon has remained a hurdle for over a decade, restricting the advantages of applying graphene in the growth of III-nitride materials, few previous studies have been conducted. Here, we report the stability of graphene on substrates containing oxygen or nitrogen atoms. Graphene has been observed on highly decomposed Al2O3; however, graphene loss occurred on decomposed AlN at temperatures over 1300 °C. To overcome graphene loss, we investigated 2-D hexagonal boron nitride (h-BN) as an alternative. Unlike graphene on AlN, it was confirmed that h-BN on AlN was intact after the same high-temperature process. Moreover, the overgrown AlN layers on both h-BN/AlN and h-BN/Al2O3 could be successfully exfoliated, which indicates that 2-D h-BN survived after AlN growth and underlines its availability for the vdWE/RE of III-nitrides with further mechanical transfer. By enhancing the stability of the 2-D material on the substrate, our study provides insights into the realization of a novel epitaxy concept.
Highlights
Placing a two-dimensional (2-D) material at the interface between a grown material and a substrate opens novel opportunities for semiconductor devices
We further demonstrated that the overgrown aluminium nitride (AlN) layers on both hBN/AlN and hexagonal boron nitride (h-BN)/Al2O3 could be successfully exfoliated, which indicates h-BN is robust during metal–organic chemical vapor deposition (MOCVD) of III-nitrides and could be used as an alternative for van der Waals epitaxy (vdWE)
Previous studies on the in uence of H2 on graphene have shown that H2 passivates broken points of graphene accompanied by dangling bonds, which could help move a large atom, such as gallium,[29] aluminum,[30] and indium[31] under graphene; the aforementioned studies show that H2
Summary
Placing a two-dimensional (2-D) material at the interface between a grown material and a substrate opens novel opportunities for semiconductor devices. We investigated the stability of two different 2-D materials, graphene and h-BN, on substrates containing either N or O as shown in Fig. S1b† (a more detailed process in reported in the Experimental section).
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