Abstract
CuO and Cu 2O layers were prepared on a copper single crystal surface by gas phase oxidation. The copper oxides were investigated by means of XPS and AES before and after sputtering with 3–5 keV Ar + ions. There is a strong sputtering effect on CuO, which is reduced to Cu 2O. The oxide Cu 2O is much more stable under identical sputter conditions. Even for longer sputter times, Cu 2O is only partially reduced to elemental copper, as can be seen from the Cu(L 3VV) AES spectrum.
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