Abstract
AbstractThe origin of metastability in a-SiH films deposited at different deposition conditions has been investigated by joint analysis of light-induced defect generation kinetics (Staebler-Wronski Effect) and differential scanning calorimetry (DSC) measurements. Light-induced defect generation kinetics were measured at elevated temperatures of 80-150°C_ DSC measurements were performed in a temperature range of 20°C - 570°C. The films microstructure were studied by IR spectroscopy analysis.The simulation of DSC curves has been used to deduce the kinetics of the low-temperature exothermic peak (LTEP) observed at 80-150° C. It was found that kinetic parameters of LTEP and SW effects has the same dependence on microstructure parameters, γ, which suggests their common nature. The analysis of a-SiH stability improvement concerning the influence of films microstructure on the kinetics of relaxation processes is presented.
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