Year-end Sale % OFF 
Abstract
The stability and electronic structures of B or/and N doped armchair (5, 5) and zigzag (9, 0) single-walled SiC nanotubes (SWSiCNTs) are investigated in detail by the first-principles theory. It is found that the ones with B and N atoms located at neighboring Si and C sites respectively are most energetically favorable both for armchair and zigzag SWSiCNTs, which means B and N atoms are prone to co-dope into the nanotubes by substitution for adjacent C and Si atoms. The energetic advantages of BN pair doped SWSiCNTs may be due to the charge compensation, just like the BN co-doped carbon nanotubes. Through B or/and N doping effects, the SWSiCNTs can be modified ranging from semiconductor to conductor dependent on chirality as well as doping atoms. These results are expected to give valuable information in building nanoscale electronic devices.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
