Abstract
Squeeze film damping effects are critical issues for nano/microelectromechanical system(NEMS/MEMS) devices. A modified analytical formula for squeeze film damping isproposed, which was derived as an analytical solution of the Poisson equation, a simplifiedNavier–Stokes equation pertaining to systems with rectangular air capacitors. Silicon oninsulator based perforated microscanners were characterized experimentally in air, to verifythe squeeze film damping model. The differences of the measured displacements from thenumerical analysis are less than 5%. Considering the fabrication-related tolerances in devicedimensions, the estimates of the squeeze film damping of the perforated microscanners arevery precise and practical, and could be broadly applied in NEMS/MEMS engineering.
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