Abstract
In this work, we report the effects of the precursor concentration on some physical properties of the spray pyrolyzed copper oxide films (CSi1-CSi4) on porous silicon substrates. Useful informations were extracted using the different characterization techniques: XRD, RAMAN, Photoluminescence (PL) spectroscopy, Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The XRD diffractogrammes show the formation of phase mixture (CuO and Cu2O) for all the samples. RAMAN analysis is in accordance with the XRD results. The PL spectroscopy provides ample informations about the emission bands of copper oxide. The SEM and AFM characterizations show a clear effect of the molarity on the microstructural properties of the deposited copper oxide films.
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