Abstract
Dedicated Raman spectroscopy investigations in the temperature range from 78 K to 298 K were performed for the graphene suspended above round holes on SiO2/Si substrate (the suspended graphene, SUG), in comparison with the surrounding graphene adhered to solid SiO2/Si substrate (the substrate supported graphene, SSG). The results confirmed that one-layer SUG (1L-SUG) was subjected to strains originated from the surrounding 1L-SSG due to the different area and shape around the hole along different directions. In further, the split-up of G band and 2D band were observed at low temperature because of the enhanced anisotropic strains in 1L-SUG due to the mismatch of thermal expansion coefficient (TEC) between the 1L-SSG and SiO2/Si substrates. The temperature-dependent (T-dependent) frequency shifts for the G band and 2D band in 1L-SUG and 1L-SSG were consistent with previous Raman investigations. Therefore, the micro-hole boundary effect in suspended graphene play a significant role in determination of the properties for graphene materials and graphene-based flexible devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
