Abstract
The inhomogeneous spin-dependent resonance signal from the depletion region of a p-n junction in silicon is investigated by modulating the external magnetic field as well as the microwave power. The signal is detected at the microwave power modulation frequency using lock-in detection. It is shown that the details of the component lines of the inhomogeneous signal can be obtained from measurements of the dependence of the overall signal on the external magnetic field modulation amplitude and frequency.
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