Abstract
The spectral response of PbTe/Pb 1− x Sn xTe unmatched heterostructure diodes with the upper PbTe layer undoped or doped with Cd or In, as well as that of PbSe y Te 1− y /Pb 1− x Sn x Te lattice matched diodes were measured at different temperatures between 10 and 100 K. A strong reduction in the spectral response of the undoped diodes at low temperatures was observed. In contrast, no such reduction was found for Cd-doped diodes. The results were explained by a simplified model assuming the existence of a small electric field in the PbSnTe layer which opposes the flow of the excited photocarriers.
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