Abstract
Abstract IV–VI semiconductors have attracted widespread attention in basic research and practical applications, because of their electrical and optoelectronic properties comparable to graphene. Herein, an optical modulator based on SnSSe with strong nonlinearity is prepared by chemical vapor transfer method. The modulation depth of proposed SnSSe saturable absorber (SA) is up to 57.5%. By incorporating SnSSe SA into the laser, the Q-switched pulses as short as 547.8 ns are achieved at 1530.07 nm. As far as we know, this is the first successful application of SnSSe in Q-switched lasers. Our investigation not only prove the optical nonlinearity of SnSSe, but also reveal the potential of SnSSe SA in ultrafast photonics.
Highlights
IntroductionIn the past few years, Q-switched fiber lasers (QSFL) have made a great progress in practical applications such as
In the past few years, Q-switched fiber lasers (QSFL) have made a great progress in practical applications such asIn recent years, some potential saturable materials with excellent properties have emerged as the times require
A QSFL based on the SnSSe saturable absorber (SA) has been successfully achieved
Summary
In the past few years, Q-switched fiber lasers (QSFL) have made a great progress in practical applications such as. The excellent properties of ultrafast relaxation time, high damage threshold and broadband absorption capacity of graphene make it shine in the applications [10,11,12,13]. The broadband absorption characteristics of MoS2 have been confirmed from the successful implement of QSFL from 1.06 to 2.1 μm [33]. J. Chen et al.: SnSSe SA with high modulation depth for passively QSFL characteristics. Compared with other saturable absorbing materials, SnSSe has a prominent advantage in large modulation depth
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