Abstract
Based on the material data of 4H-SiC, we present a breakdown model for 4H-SiC pn junction diode, which includes both the avalanche impact ionization and the ban d-to-band tunneling. With this model, the influence of tunneling on the breakdow n characteristics of the devices is analyzed. The breakdown mechanism at differe nt temperatures and doping concentrations is explained, and the simulation resul ts can give a nice description for the breakdown characteristics of real devices .
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
