The Simulation Research about the Influence of Thermal Capacity of High Voltage IGBT Package in DC Circuit Breaker on Chip Temperature Rise

Abstract

In recent years, with the vigorous development of power electronics technology, the utilization efficiency of wind and solar energy and other renewable energy sources have been continuously improved and the scale has been continuously expanded. And the large-scale application of power electronic devices in power system has become an unstoppable trend. However, the application environment of the power system also puts forward some special requirements for the device: high voltage, high current, high reliability, etc. This paper studies the electrical stress of the IGBT in the DC circuit breaker, and uses it as a heat source to compare the instantaneous temperature rise of the chip under welding package and crimping packaging through finite element thermal simulation. From the perspective of module heat capacity, the influence of the two packaging structures on the instantaneous temperature rise of the IGBT chip under high current pulse energy is analyzed. We found that the increase the thickness of metal layer which connected with the chip, equivalent to increase the heat capacity of the chip, and it was benefit to inhibiting chip instantaneous temperature rise, improving the cooling performance of the chip. At the same time, we also considered the influence of the thickness of metal layer to increase heat and power consumption of the whole system. Based on the simulation results, metal layer optimization design scheme was put forward.