The Simulation of the Terahertz Modulator by CMOS Process

Abstract

The paper introduced the simulation of the terahertz modulator in complementary metal-oxide-semiconductor (CMOS) process. The modulator is composed of a metal split-ring resonator (SRR), CMOS, semiconductor dielectric layer and silicon substrate. The modulator can make different electromagnetic response to the transmitted terahertz wave between the connection state and the disconnection state of the gap in the SRR, which could be achieved by connecting CMOS in the gap. At 0.31THz, the simulation results show that the amplitude modulation depth of the modulator reached 28.8%. When the simulation keeped the modulator system in resonating state, the transmission coefficient was about 0.0018, while the conductive had reached 0.2895. If the design can pass the experimental verification in the future, it can make some references for further exploration of the high-speed and high modulation depth of the terahertz amplitude modulator.