The simulation of implantation of heavy charged particles in a crystalline material

Abstract

We have studied the channeling effect in the ion implantation by simulating the collision of heavy charged particles with a crystalline material. In order to determine the penetration depth of fast heavy ions in crystalline material, we modified a model from pervious work and studied a situation where heavy As and P ions impinging on a crystal Si〈100〉 surface. A new stopping power calculation method is combined to the transport theory based ion range calculation equation for the fast and accurate numerical calculation of ion ranges. We simulated penetration event by dividing the surface of crystal in to three different region based on the distance from atomic centers in crystal structure. We solved differential equation numerically for each ions simulated. The results have been compared with similar models and the experimental data from literature. We found a good agreement with experiment for the behavior of distribution of ions in the crystalline substance. The model proposed here can be used successfully to predict channeling implantation profiles of heavy ions.