Abstract
Heterojunction bipolar GaAs transistor with AlGaAs emitter and Si-“Camel”-transistor were simulated using manyparticles method for hot electrons and stochastic dynamics method for equilibrium holes and electrons. Some transient processes were investigated at times of the order 10 −11 s. Dynamics of transient processes is affected by electron space charge and unequipotentiality of base region.
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