The silicon impurity as a possible growth‐regime indicator for LiNbO3 crystals

Abstract

AbstractThe influence of Si concentration and temperature regimes on the visually observable properties of LiNbO3 single crystals grown by Czochralski method was studied. Si concentration measurements were carried out and minima in the radial and axial distribution curves have been established. An upper estimate is given for the equilibrium distribution coefficient of Si in LiNbO3. A direct correlation has been found between the degree of opacity and the Si concentration. The variation of the Grashof number during growth and a correlated modification of the structure of the concentration layer width, implying a position dependent fulfilment of the Hurle‐Bardsley criterium for constitutional supercooling, accounts reasonably well with the visually observable properties of the opaque regions appearing in the course of crystal growth. The use of Si as an overall indicator for the characterization of growth regimes is discussed.