Abstract
A Si/Pd ohmic contact scheme to n-GaP (n∼5×1017 cm−3) was investigated using Rutherford backscattering spectrometry, transmission electron microscopy, energy dispersive x-ray spectrometry, and the Cox–Strack measurement. Contact resistivities of ∼2×10−4Ω cm2 are obtained for annealing temperatures ranging from 350 to 650 °C. This contact is thermally stable at 550 °C. The ohmic contact formation mechanism is rationalized in terms of the solid phase regrowth of an n+ layer and the solid phase epitaxy of a Si layer.
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