Abstract

Analysing the electronic structure of silicon crystals, both regular and doped with erbium, we conclude that the erbium ion tends to form bonds with three ligands. The role of oxygen in the passivation of the formed dangling bond is discussed. Studies of the electric, magnetic, and optical properties of Si:Er grown by the Czochralsky method show that the Er 2O complexes existing in these crystals become electrically and optically active only in the case when they locate near the shallow donor (phosphorus).

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