Abstract
The detection of low ozone concentrations in air (no higher than 120 ppb) using semiconducting films based on Fe2O3 · In2O3 obtained by laser ablation of the corresponding targets onto alumina substrates was studied. The temperature of the substrate during film deposition influenced their sensor properties. Temperature effects on the sensitivity of the films with respect to ozone were studied over the temperature range 200–380°C. Maximum sensitivity was reached at 250°C irrespective of the temperature of film deposition. The dependence of film sensitivity on the concentration of ozone in air was determined. At equal ratios between In2O3 and Fe2O3, the sensitivity of the sensor films prepared by laser ablation was much higher than that of thick-film sensors obtained from aqueous metal oxide suspensions by the stenciling technique. Possible reasons for the effects observed were considered.
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