Abstract
In this study, we report results of a self-consistent calculation obtained for the sub-band structure of Si δ-doped GaAs material by using a new alternative method. We will discuss the influence of the δ-doping concentration and the δ-layerthickness on the sub-band structure for a non-uniform distribution, which is taken as different from the known Gaussian distribution. The confining potential, the sub-band energies, the sub-band occupations, and the Fermi energy have been calculated by solving the Schrodinger and Poisson equations by using the Airy functions self-consistently.
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