The Self‐Compression of Injected Electron–Hole Plasma in Silicon

Abstract

A recombination radiation line of electron-hole plasma, observed in electroluminescence spectra of tunneling silicon MOS diodes, has been investigated at the temperature T > 300 K. The internal quantum efficiency of the luminescence, equal to (1-3) x 10 -3 , appears to be unexpectedly high. The spectral position of the luminescence line indicates that a weak overheating of the diode by the diode current results in an anomalously strong reduction of the semiconductor energy gap inside the electron-hole plasma. A unique threshold optical hysteresis is observed in the luminescence intensity with changing diode current. These results are explained by condensation of the injected electron-hole plasma into a dense state. A reduction of the semiconductor energy gap due to generation of phonons by the plasma is discussed as a reason of the plasma condensation. The plasma condensation is identified as the plasma self-compression.