Abstract
We present a method of selectively removing metallic single-walled carbon nanotubes (SWCNTs) from as-grown arrays on quartz substrates. The process utilizes an external silicon piece as a temporary global top gate to increase the resistance of the semiconducting SWCNTs while current is passed through the metallic SWCNTs, causing electrical breakdown through joule heating. The resulting SWCNT field-effect transistors (FETs) consistently produce on/off current ratios greater than 1000. Additionally, we find that the high frequency parasitic losses between 1 GHz and 6 GHz on the completed SWCNT FETs are significantly lower than on comparable SWCNT FETs fabricated on silicon substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
