Abstract
While the first generation spintronics, such as GMR heads (Nobel Prize in Physics 2007) sharply increased magnetic storage density, it is the 2nd generation spintronics, integrating magnetic materials with semiconductors, that has the potential to extend the benefits of spin to the wider IT industry. One of the major challenges in developing this second generation of spintronic devices is the synthesis of high quality spintronic materials with Curie temperatures that are above room temperature, large spin polarisation at the Fermi level and matched conductivity between the magnetic material and semiconductor.
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