The Second Generation of the Layout Styles for MOSFETs to Further Boosting the Electrical Performance of Analog MOSFETs and CMOS ICs

Abstract

This article describes, for the first time, the study of electrical behavior of the first element belonging to the family of Second Generation of layout styles for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), entitled Half-Diamond. It was conceived in order to further boosting the electrical performance of the analog MOSFETs in relation to the one found in Diamond MOSFETs (hexagonal gate shape). This innovative layout style has by objective further enhance the Longitudinal Corner Effect (LCE) and mainly the Parallel Connections of MOSFETs with Different Channel Lengths Effect (PAMDLE) by the means of further reducing of the effective channel lengths of Diamond MOSFETs in relation to those measured in the conventional (rectangular gate geometry) ones (RMs). The main results found by the three-dimensional numerical simulations indicates that the Half-Diamond MOSFET (HDM) is able to provide a saturation drain current 13% higher than the one observed in the RM counterpart. Furthermore, the electrical behaviors of LCE, PAMDLE and DEPAMBRE in HDM are analyzed in detail by observing the electrical behavior of the electrostatic potentials, longitudinal electric fields and drain current densities.