Abstract
The adsorption of Cs on Si(111)-7 × 7 surfaces at 170 K was studied by x-ray photoelectron spectroscopy. The growth mode was determined as layer-by-layer growth. Si(2p) core-level spectra show an initial shift to higher binding energies of 70 meV for small Cs coverages. As the Cs overlayer becomes metallic, the Si(2p) core level shifts to lower binding energies by 70 meV with respect to that for the clean surface. The barrier height of Cs/n-Si(111)-(7 × 7)i Schottky contacts is obtained as 0.49±0.05 eV. This result agrees well with the prediction of a model based on metal-induced gap states and electronegativity.
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