Year-end Sale % OFF 
Abstract
A surface must be clean and atomically flat to enable a unique and simple interpretation of results. In many fundamental studies clean surfaces are used, whereas flatness is checked only qualitatively or simply assumed to be present. Therefore in the present investigation cleaved surfaces of Si and Ge have been studied systematically with respect to deviations from the flat surface. By using LEED, electron microscopy and a novel optical reflection technique several parameters have been determined: angles of inclination, the average angle, atomic step height, orientation and arrangement of steps, and average edge atom density. A description of the shape of a cleaved surface is given by a combination of various results. Since about 1–5 % of all surface atoms are in edge position, those atoms may be very important with respect to electronic and photoelectric properties.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
