Abstract
Due to the excellent electrical transport properties and optoelectronic performance, thin indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting materials.
Highlights
IntroductionThe isolation of ultrathin two-dimensional (2D) semiconducting materials, such as single-layer transition metal dichalcogenides (TMDCs) and few-layer black phosphorous (bP), has attracted large attention due to their potential applications in nextgeneration electronic and optoelectronic devices.[1,2,3,4,5] The large surface-to-volume ratio of these 2D materials, which on one side makes them very tunable and sensitive to external stimuli, on the other side can make these materials and the devices based on them extremely vulnerable to environmental degradation.[6,7,8,9,10,11,12] For example, when few-layer bP is exposed to the air, a fast degradation of the material occurs through a photooxidation process that leads to a reduction of the performances and the eventual failure of devices based on bP.[6,7,8] A similar environmental degradation phenomenon has been observed on thin gallium selenide (GaSe),[9] gallium telluride (GaTe),[13] and even CVD (chemical vapor deposition)-grown
By comparing optoelectronic measurements obtained in Indium selenide (InSe) photodetectors operated under various environmental conditions, we propose a model to explain the photocurrent generation mechanism in InSe devices and how it is influenced by the environment
By characterizing the InSe crystal with transmission electronic microscopy (TEM) and Raman spectroscopy, we find that the phase of the crystal is e-type and that the estimated ratio between In and Se atoms is In : Se 1 : 0.993, see Fig. S1 of the ESI† and our previous work.[36]
Summary
The isolation of ultrathin two-dimensional (2D) semiconducting materials, such as single-layer transition metal dichalcogenides (TMDCs) and few-layer black phosphorous (bP), has attracted large attention due to their potential applications in nextgeneration electronic and optoelectronic devices.[1,2,3,4,5] The large surface-to-volume ratio of these 2D materials, which on one side makes them very tunable and sensitive to external stimuli, on the other side can make these materials and the devices based on them extremely vulnerable to environmental degradation.[6,7,8,9,10,11,12] For example, when few-layer bP is exposed to the air, a fast degradation of the material occurs through a photooxidation process that leads to a reduction of the performances and the eventual failure of devices based on bP.[6,7,8] A similar environmental degradation phenomenon has been observed on thin gallium selenide (GaSe),[9] gallium telluride (GaTe),[13] and even CVD (chemical vapor deposition)-grown. The mobility of 2D semiconducting transistors kept in a vacuum or encapsulated with boron nitride is typically more than one order of magnitude larger than the mobility measured in the air.[15,16] In the case of single-layer and bilayer
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