The role of transient damage annealing in shallow junction formation

Abstract

Damage introduced into the Si substrate by ion-implantation can have a profound effect on the diffusion of dopants during rapid thermal annealing (RTA) or low temperature furnace annealing. In this paper defect production models are discussed for three cases: 1) low dose B + implants, 2) B + implants into preamorphized Si, and 3) BF 2 +, As + and P + self-amorphizing implants. Enhanced diffusion transients of dopants are related to the annealing of point-defect clusters, end-of-range dislocations and projected range misfit dislocations. Diffusion activation energies are reduced by the formation enthalpies of point defects generated by the annealing of implantation-induced damage.