Abstract
Herein, we report the influence of the surface conditions on the cathodoluminescence (CL) emissions from Zn2GeO4 nanowires and Zn2GeO4/SnO2 heterostructures obtained by thermal evaporation technique. A Zn2GeO4 nanowire surrounded by a discontinuous shell of SnO2 crystals composed the Zn2GeO4/SnO2 heterostructures. Local CL measurements at different acceleration voltages allow monitoring the emission bands originated at the interface region, showing an additional deep-ultraviolet (UV) emission at 4.40 eV, which has not been previously reported. CL spectra from SnO2 coated Zn2GeO4 nanowires also show this deep-UV emission. The results would confirm the presence of a shallow energy level close to the conduction band, which becomes active by passivation of Zn2GeO4 nanowires surface by the SnO2 coating.
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