The role of surface defects in multi-exciton generation of lead selenide and silicon semiconductor quantum dots

Abstract

Multi-exciton generation (MEG), the creation of more than one electron-hole pair per photon absorbed, occurs for excitation energies greater than twice the bandgap (E(g)). Imperfections on the surface of quantum dots, in the form of atomic vacancies or incomplete surface passivation, lead to less than ideal efficiencies for MEG in semiconductor quantum dots. The energetic onset for MEG is computed with and without surface defects for nanocrystals, Pb(4)Se(4), Si(7), and Si(7)H(2). Modeling the correlated motion of two electrons across the bandgap requires a theoretical approach that incorporates many-body effects, such as post-Hartree-Fock quantum chemical methods. We use symmetry-adapted cluster with configuration interaction to study the excited states of nanocrystals and to determine the energetic threshold of MEG. Under laboratory conditions, lead selenide nanocrystals produce multi-excitons at excitation energies of 3 E(g), which is attributed to the large dielectric constant, small Coulomb interaction, and surface defects. In the absence of surface defects the MEG threshold is computed to be 2.6 E(g). For lead selenide nanocrystals with non-bonding selenium valence electrons, Pb(3)Se(4), the MEG threshold increases to 2.9 E(g). Experimental evidence of MEG in passivated silicon quantum dots places the onset of MEG at 2.4 E(g). Our calculations show that the lowest multi-exciton state has an excitation energy of 2.5 E(g), and surface passivation enhances the optical activity of MEG. However, incomplete surface passivation resulting in a neutral radical on the surface drives the MEG threshold to 4.4 E(g). Investigating the mechanism of MEG at the atomistic level provides explanations for experimental discrepancies and suggests ideal materials for photovoltaic conversion.