Abstract
The combined effect of the changes in the number and type of vacancies and dislocation density on selenium and sulfur diffusion in single crystals of undoped semi-insulating gallium arsenide has been studied. The differences in the diffusion mechanisms in the subsurface region of samples with an initial deficiency in gallium or arsenic are established as well as the dependence of the effective radius of arsenic trapping by dislocations on the ratio of the concentrations of gallium and arsenic vacancies.
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