Abstract
The effect of sputtering current that flow in a carbon rod on the structural and transport properties of Si-C junction is studied. Si-C junction is fabricated by plasma sputtering in Argon gas atmosphere without catalysts with thickness of 20, 40 and 60 nm. Images of the specimen by scanning electron microscope (SEM) and atomic force microscope (AFM) show that the carbon layer is as carbon nanotubes with diameters about 20 - 30 nm. X-ray and Raman spectrums show peak characteristics of the carbon nanotubes, the G and D bands appear for all thicknesses indicating free of defect carbon nanotubes. Two parameters about the thickness of the carbon layer and the sputtering current for different thicknesses and currents were studied. Nanotubes evidence was clear. We noticed that the sputtering current and thickness of layers affect the structure of CNT layer leading to the formation of grains. Increasing plasma current led to decrease grain formation however increasing thickness ends to increase grain size; moreover it led to amorphous structure formation and this was proved through X-ray, Raman spectra and AFM images.
Highlights
Carbon Nanotubes (CNT’s) are cylindrical structures of nanoscale diameter; it composed of carbon atoms in a hexagonal arrangement
For all thicknesses and all currents included in the study, the effect of plasma sputtering current is opposite to increasing of layers thickness
Increasing plasma current will decrease grain formation and increasing thickness will increases grain size and it lead to amorphous structure formation, this were proved by X-ray, Raman spectra and Atomic force microscope (AFM) images
Summary
Carbon Nanotubes (CNT’s) are cylindrical structures of nanoscale diameter; it composed of carbon atoms in a hexagonal arrangement. They were discovered in 1991 by Japanese scientist Sumio Iijima [2]. The unique properties of CNT’s, such as tremendous strength and excellent thermal and electrical conductivity, have caused this. (2014) The Role of Sputtering Current on the Optical and Electrical Properties of Si-C Junction. Arc-discharge method employs evaporation of graphite electrodes in electric arcs that involve very high temperatures (~4000 ̊C). Laser-vaporization technique employs evaporation of high-purity graphite target by high-power lasers in conjunction with high-temperature furnaces. Chemical vapor deposition (CVD) required incorporating catalyst-assisted by thermal decomposition of hydrocarbons [1]-[5]
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