Abstract
Spreading resistance profiling (SRP) has the unique ability to measure doping profiles through multiple junctions, to essentially unlimited depths and over a range of densities from 1010 to 1021 /cm3. This range and flexibility makes the technique ideally suited to find various device failure mechanisms that can arise during dopant processing, as well as aid New Technology Development (NTD).We show through case studies how SRP can reveal various failure mechanisms and illustrate its use in the development of new MOS technologies
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