The role of special grain boundaries during the grain growth in Fe-3%Si

Abstract

An experimental study of the role of coincidence site lattice (CSL) boundaries in the process of grain growth in grain oriented Fe-3%Si has provided important information about the development of texture. Specimens obtained after decarburization were annealed at temperatures both lower and higher than the temperature of secondary recrystallization. The textures of these specimens were analyzed and the frequency of CSL boundaries from all grains was calculated. In addition, the frequency of CSL boundaries with respect to the 110 〈001〉 grains was calculated for the investigated specimens. By comparing the distribution of CSL boundaries obtained for Goss grains and the distribution of CSL boundaries from all grains, it was possible to predict which CSL boundaries affect the Goss grain growth during secondary recrystallization. Our analysis indicates that Goss grains having a high amount of Σ5 CSL boundaries before the secondary recrystallization have a lower number of these boundaries during grain growth. Analysis of other types of grain boundaries indicate that development of the 110 〈001〉 texture in silicon steel is not influenced by the total number of CSL boundaries, but rather by the frequency of specific CSL boundaries such as the Σ5 CSL boundaries. In the investigated specimens, the Goss grains have a size advantage over other grains, which can be considered another important factor in the preferred growth of Goss grains.