The role of silanol groups on the reaction of SiO2 and anhydrous hydrogen fluoride gas

Abstract

AbstractIt is essential to etch SiO2 for producing silica glass components, semiconductor devices, and so on. Although wet‐etching with hydrogen fluoride (HF) solutions is usually employed for this purpose, it faces a drawback that microstructures stick during the drying of the solution. To overcome this problem, we have developed a dry‐etching technique with gaseous HF at high temperatures. In the present study, an interesting phenomenon was found that silicon thermal oxides were much less etched than vitreous silica by gaseous HF. Such difference had not been found in wet‐ or humid HF gas etching. Because their bulk chemical formulae are the same (SiO2), it was suggested that the surface species affected the reaction rate. In fact, preprocessing with water vapor plasma remarkably increased the etching rate on the thermal oxides layer, and vacuum heating almost completely suppressed the reaction on the vitreous silica and the plasma‐treated thermal oxides. These results indicate that the surface silanol groups enhance the reaction between SiO2 and gaseous HF. Based on the results, a model of chain reaction for SiO2 and gaseous HF was proposed, where the surface silanol groups act as the reaction center.